阻变存储器无源高密度交叉阵列研究进展  

An overview of resistive random access memory based high-density crossbar array

作　　者：李晓燕 李颖弢[2] 高晓平 陈传兵 韩根亮 Xiaoyan Li;Ylngtao L;Xiaoping Gao;Chuanbing Chen;Genliang Han(Key Laboratory of Sensor and Sensing Technology,Gansu Province,Lanzhou 730000,China;School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China)

机构地区：[1]甘肃省传感器与传感技术重点实验室,兰州730000 [2]兰州大学物理科学与技术学院,兰州730000

出　　处：《科学通报》2018年第28期2954-2966,共13页Chinese Science Bulletin

基　　金：国家自然科学基金(61774079;61664001);甘肃省科技重点研发计划(18YF1GA088);甘肃省自然科学基金(17JR5RA180)资助

摘　　要：阻变存储器(resistive random access memory, RRAM)以其结构简单、操作速度快、可缩小性好、易三维(3D)集成、与互补金属氧化物半导体(complementary metal oxide semiconductor, CMOS)工艺兼容等优势成为下一代非挥发性存储器的有力竞争者之一,但基于阻变存储器无源交叉阵列中的交叉串扰问题影响了其实现高密度存储的应用和发展.本文简单介绍了阻变存储器交叉阵列中的串扰现象,详细综述了避免无源交叉阵列串扰的1D1R(one diode one resistor)结构、1S1R(one selector one resistor)结构、背靠背(back to back)结构及具有自整流效应的1R(one resistor)结构.同时,对基于阻变存储器无源交叉阵列实现高密度存储的研究发展趋势以及面临的挑战进行了展望.In the global era of knowledge economy and electronic information, semiconductor memories play a crucial role in the storage of the massive information. In order to achieve a higher integration density, the microelectronics process node is pushed forward to the next generation according to the Moore＇s Law. However, the current mainstream nonvolatile memory technology based on charge storage, such as flash memory, is rapidly running into its physical limit due to the tradeoffs between the high speed, long time retention and low power operation. Therefore, several new types of nonvola- tile memories based on other storage concepts have been intensively investigated to replace Flash. Resistive random ac- cess memory （RRAM） device, which is based on resistance change modulated by electrical stimulus, has been considered as one of the most promising candidate for next-generation nonvolatile memory due to its potential advantages for simple structure, fast switching speed, excellent scalability, three-dimensional （3D） stackable integration, and good compatibility with the current complementary metal oxide semiconductor （CMOS） technology. However, a crossbar array consisting of only RRAM cell suffers unavoidable cross-talk interference due to leakage current paths through neighboring unselected cells with low resistances, leading to a misreading problem, the biggest hindrance for the high-density memory application. It can be effectively tackled by the addition of necessary nonlinearity to the RRAM by integrating a highly nonlinear and bidirectional selector device. In this paper, we give an overview on the familiar architectures to diminish the sneak current in crossbar array, including 1D 1R （one diode one resistor）, 1S 1R （one selector one resistor）, 1CRS 1R （one CRS device one resistor, complementary resistive switch （CRS） devices forming by two back-to-back connected memory cells） and 1R （one resistor） with self-rectifying effect. In the meantime, we discuss the research trends and

关 键 词：阻变存储器 高密度 无源交叉阵列 交叉串扰 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]