Synthesis and optical properties of Cu_2SnZnS_4 films under different sulfur atmospheres  

作　　者：Xian-Cong He Hong-Lie Shen Jin-Hong Pi Chuan-Xiang Zhang Yu Hao Xiao-Bo Shi 

机构地区：[1]Department of Materials Science and Engineering,Nanjing Institute of Technology [2]College of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics

出　　处：《Rare Metals》2018年第9期808-814,共7页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (No.61176062);the Foundation of Nanjing Institute of Technology (No.ZKJ201302);Jiangsu Innovation Practice Training Projects for College Students (No.201311276044X);the Undergraduate Technology Innovation of Nanjing Institute of Technology (Nos.N20130224 and N20140206)

摘　　要：The electrodeposited precursor is a mixture of Cu, Sn, and Zn alloys, these elements form Cu6Sn5 and CuZn binary phases, and subsequently these phases trans- form into many binary and ternary intermediates, such as CuS, ZnS, Cu2SnS3, and Cu2ZnSnS4 （CZTS） at low annealing temperature in pure sulfur and H2S atmospheres. Finally, CZTS films can be dizing at 550 ℃ for 1 h in completely formed by sulfi- pure sulfur and H2S atmo- spheres. However, the initial temperature of synthesizing CZTS in H2S atmosphere is higher than that in pure sulfur atmosphere, but the highest temperature of synthesizing CZTS in H2S atmosphere is lower than that in pure sulfur atmosphere. The direct band gaps of the CZTS films syn- thesized at 550 ℃ for 1 h in pure sulfur and H2S atmo- spheres are about 1.54 and 1.52 eV, respectively.The electrodeposited precursor is a mixture of Cu, Sn, and Zn alloys, these elements form Cu6Sn5 and CuZn binary phases, and subsequently these phases trans- form into many binary and ternary intermediates, such as CuS, ZnS, Cu2SnS3, and Cu2ZnSnS4 （CZTS） at low annealing temperature in pure sulfur and H2S atmospheres. Finally, CZTS films can be dizing at 550 ℃ for 1 h in completely formed by sulfi- pure sulfur and H2S atmo- spheres. However, the initial temperature of synthesizing CZTS in H2S atmosphere is higher than that in pure sulfur atmosphere, but the highest temperature of synthesizing CZTS in H2S atmosphere is lower than that in pure sulfur atmosphere. The direct band gaps of the CZTS films syn- thesized at 550 ℃ for 1 h in pure sulfur and H2S atmo- spheres are about 1.54 and 1.52 eV, respectively.

关 键 词：Cu2ZnSnS4 Electrodeposited precursor ANNEALING Optical properties 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]