Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor  

作　　者：Lin-Dong Ma Yu-Dong Li Lin Wen Jie Feng Xiang Zhang Tian-Hui Wang Yu-Long Cai Zhi-Ming Wang Qi Guo 马林东;李豫东;文林;冯婕;张翔;王田珲;蔡毓龙;王志铭;郭旗(Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences,Xinjiang Technical Institute of Physics ＆ Chemistry,Urumqi 830011,China;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi 830011,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China [2]Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China [3]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Physics B》2018年第10期352-356,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11675259);the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)

摘　　要：A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

关 键 词：CMOS active pixel sensor dark current quantum efficiency 

分 类 号：TN32[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]