利用CuI掺杂NPB结构增强有机磷光电致发光器件的空穴注入  

Enhanced hole injection in phosphorescent organic light-emitting diodes by doping of CuI in NPB

作　　者：华杰[1,2] 关宇[1,2] 孙东舒 王宇[1,2] 江海鹏[1,2] 崔伟男[1,2] 汪津 姜文龙[1,2] HA Jie;GUAN Yu;SUN Dong-shu;WANG Yu;JIANG Hai-peng;CIU Wei-nan;WANG Jin;JIANG Wen-long(Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education,Siping 136000,China;College of hfformation Technology,Jilin Normal Lniversity,Siping 136000,China)

机构地区：[1]吉林师范大学功能材料物理与化学教育部重点实验室,吉林四平136000 [2]吉林师范大学信息技术学院,吉林四平136000

出　　处：《吉林师范大学学报（自然科学版）》2018年第4期14-18,共5页Journal of Jilin Normal University:Natural Science Edition

基　　金：国家自然科学基金项目(61275047)

摘　　要：增强空穴注入能力是提高有机电致发光器件(OLEDs)光电性能的一个重要因素.采用碱金属化合物Cu I掺杂NPB结构作为器件的空穴注入层,制备了空穴注入能力增强的有机磷光器件.当发光亮度为1 000 cd/m2时,器件的驱动电压为6. 44 V,相比于参考器件降低了约2. 11 V;器件的最大功率效率为7. 7 lm/W,相比于参考器件提高了约71%;器件的最大亮度达到41 570 cd/m2.上述实验结果表明,优化的Cu I:NPB结构有效促进了器件的空穴注入和传输能力,从而降低了驱动电压,提高了发光亮度,改善了功率效率.A key issue of the improvement for optoeleetronie performance in organic light-emitting diodes （OLEDs） are the enhancement of hole injection. The improved hole injection can be achieved in phosphorescent green OLED by doping of copper iodide （CuI） in N, N＇-bis （naphthalen-1-yl）-N, N＇-bis （phenyl） -benzidine （NPB）. For the device with CuI ： NPB as hole injection layer （ HIL）, the driving voltage of 6.44 V at the brightness of 1 000 ed/m2 is 2.11 V lower than that of the ret）renee device with neat NPB HIL. Moreover, the maximum power efficiency of 7.7 lm/W increases by about 71% compared to that of the referenee device. Additionally, the maximum brightness reaches 41570 ed/m2. This result is ascribed to the utilization of CuI： NPB HIL to facilitate the hole injection and transport from the anode, resulting in the reduction of driving voltage, the inereasement of brightness and the improvement of power efficiency.

关 键 词：有机电致发光器件 功率效率 空穴注入 驱动电压 

分 类 号：TN27[电子电信—物理电子学]