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作 者:郭杰 马军山[1] 饶丰[2] 褚静[2] GUO Jie;MA Junshan;RAO Feng;CHU Jing(School of Optical Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;School of Electrical and Optoelectronic Engineering,Changzhou Institute of Technology,Changzhou 213002,China)
机构地区:[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]常州工学院电气与光电工程学院,江苏常州213002
出 处:《光学仪器》2018年第5期1-7,共7页Optical Instruments
基 金:国家重点研发计划(2017YFF02-10002);江苏省产学研前瞻性项目(BY2016031-05);2017江苏省"双创博士"项目
摘 要:基于光谱分布特征参数,设计了一种新型GaN基白光LED结温测量方法。该方法未考虑瞬时脉冲电流热效应,通过测量不同环境温度和瞬时脉冲电流下的LED相对光功率分布,分析光谱分布特征参数、驱动电流与结温之间的关联性。依据该关联性及实际工作时的光谱,即可求得结温。实验结果表明,与正向电压法和蓝白比法相比,本方法无需破坏产品结构就可更准确地测量LED结温。当GaN基白光LED功率为1W、脉宽为1ms时,平均误差小于1.5℃。Based on the spectral distribution characteristic parameters, a novel mearsurement method is proposed to determine the junction temperature of GaN based white light LED. This method ignored the thermal effects of the instantaneous pulse current, and analyzed the correlation among of the spectral distribution characteristic parameters, the driving current and the junction temperature by measuring the relative spectral power distributions of LED under different ambient temperature and instantaneous pulse current. The junction temperature can be obtained according to the correlation and the spectrum of actual work. The experimental results show that compared with the forward voltage method and the blue white ratio method, "the LED junction temperature can be more accurately measured without damaging the product structure. The deviation of 1 W GaN-based white light LED is about 1.5 ℃ when the pulse width is 1 ms.
关 键 词:光谱学 结温测量 光谱分析 发光二极管 质心波长 半高全宽
分 类 号:TN312.8[电子电信—物理电子学] O433.4[机械工程—光学工程]
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