MEMS/GMR集成磁传感器的磁滞抑制方法  

Hysteresis suppression method of integrated MEMS/GMR sensor

作　　者：吕云飞 潘孟春[1] 胡佳飞 陈棣湘[1] 田武刚 周继昆 LU Yun-fei;PAN Meng-chun;HU Jia-fei;CHEN Di-xiang;TIAN Wu-gang;ZHOU Ji-kun(Department of Instrument Science and Technology,National University of Defense Technology,Changsha 410073,China;Institute of Systems Engineering,China Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]国防科学技术大学仪器科学与技术系,湖南长沙410073 [2]中国工程物理研究院总体所,四川绵阳621900

出　　处：《传感器与微系统》2018年第10期8-11,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(51507178;61671460;11604384);国家自然科学基金委员会与中国工程物理研究院联合基金资助项目(U1430105)

摘　　要：1/f噪声是限制磁阻(MR)传感器低频检测能力的重要因素,而基于微机电系统(MEMS)的磁力线调制可使1/f噪声降低两个数量级以上。然而,由磁滞引起的非线性响应是限制其实际应用的主要问题,此外其具有单向响应特性问题。提出了一种双向脉冲磁化方法,可显著降低磁滞,提高MEMS/巨磁阻(GMR)集成磁传感器的线性度。此外,可以通过区分响应差异与双向脉冲磁化来实现双极磁场检测。实验结果表明:双向脉冲磁化可实现91%的磁滞抑制,灵敏度提高15.4%。1/f noise is main factor to restrict detection ability of magneto-resistive（ MR） sensors at low frequency.And magnetic line of force modulation based on micro-electro-mechanical systems（ MEMS） can reduce 1/f noise above two orders. However,nonlinear response caused by magnetic hysteresis is the main problem to restrict its application,as well as unidirectional response property problem. A bi-direction pulse magnetization method is proposed which can reduce magnetic hysteresis dramatically and improve linearity of integrated MEMS/GMR sensors. in addition,bipolar magnetic field detection can be achieved by distinguishing the response disparity and pulse magnetization of bi-direction. Experimental results show that the bi-direction pulse magnetization method can realize 91 % reduction of hysteresis and 15. 4 % improvement of sensitivity.

关 键 词：脉冲磁化 磁滞抑制 磁阻传感器 微机电系统/巨磁阻集成磁传感器 

分 类 号：TP39[自动化与计算机技术—计算机应用技术]