PZT厚膜的电雾化沉积与溶胶渗透研究  

Research on Electrohydrodynamic Atomization Deposition and Sol Infiltration of PZT Thick Films

作　　者：石鹏 王大志[1] 周鹏 李学木 慈元达 王骁[3] 梁军生[1] SHI Peng;WANG Da-zhi;ZHOU Peng;LI Xue-mu;CI Yuan-da;WANG Xiao;LIANG Jun-sheng(Key Laboratory for Micro/Nano Technology and System,Liaoning Province,Dalian University of Technology,Dalian 116024,China;Key Laboratory of High Efficiency and Clean Mechanical Manufacture of MOE,Shandong Province,Shandong University,Jinan 250061,China;Navigational Department,Liaoning Province,Dalian Naval Academy,Dalian 116018,China)

机构地区：[1]大连理工大学辽宁省微纳米技术及系统重点实验室,辽宁大连116024 [2]山东大学高效洁净机械制造教育部重点实验室,山东济南250061 [3]海军大连舰艇学院航海系,辽宁大连116018

出　　处：《机电工程技术》2018年第9期12-15,共4页Mechanical & Electrical Engineering Technology

基　　金：国家自然科学基金资助项目(编号:51475081)

摘　　要：制备锆钛酸铅(PZT)悬浮液,采用电雾化沉积(EHDA)技术,在硅衬底上沉积PZT厚膜,研究溶胶渗透工艺对电雾化沉积PZT厚膜的致密性与电学性能的影响。结果表明:经过2C+1S溶胶渗透工艺处理的PZT厚膜致密性与电学性能得到明显提升,在50 kHz测试频率下厚膜的残余极化强度Pr和相对介电常数εr分别由溶胶渗透前的7.3μC·cm^(-2)和186提升为溶胶渗透后的16.1μC·cm^(-2)和400。Pb-based lanthanum-doped zirconate titanates （PZT） composite slurry was prepared. Electrohydrodynamic atomization deposition （EHDA） technology was used to deposit PZT thick film on the silicon substrate. The effects of sol infiltration process on the density and electrical properties of the deposited PZT thick film were examined. The results show that after the 2C ＋ 1S sol infiltration process the density and electrical properties of the PZT thick film is improved obviously and the remnant polarization Pr and relative permittivity εr at 50 kHz are increased from 7.3 μC·cm^-2 to 16.1 μC·cm^-2 and from 186 to 400, respectively.

关 键 词：PZT 厚膜 电雾化沉积 溶胶渗透 

分 类 号：TM282[一般工业技术—材料科学与工程]