Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology  

作　　者：Bingxin ZHANG Xia AN Pengqiang LIU Xiangyang HU Ming LI Xing ZHANG Ru HUANG 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics,Peking University

出　　处：《Science China(Information Sciences)》2018年第10期273-275,共3页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China (Grant Nos. 61421005, 60806033, 61534004, 61474004);National Key Research and Development Plan (Grant No. 2016YFA0200504)

摘　　要：Dear editor,Ge has been considered as a very promisirtg can-didate as a channel material of MOSFET to ex-tend Moore＇s law beyond sub-7 nm node, due toits high and symmetric mobility, as well as thecompatibility with conventional Si process [1, 2].In spite of higher carrier mobility than Si, thereare still several challenges for Ge MOSFETs.Dear editor,Ge has been considered as a very promisirtg can-didate as a channel material of MOSFET to ex-tend Moore＇s law beyond sub-7 nm node, due toits high and symmetric mobility, as well as thecompatibility with conventional Si process [1, 2].In spite of higher carrier mobility than Si, thereare still several challenges for Ge MOSFETs.

关 键 词：Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology NPP Ni 

分 类 号：TN304.12[电子电信—物理电子学] TN91