γ射线辐照快速生长KDP晶体的性能  

Performance of Rapidly Grown KDP Crystals Irradiated by Gamma Ray

作　　者：谢晓义 朱茂东 王斌[1] 王虎[1] 齐红基[1] 邵建达[1] Xie Xiaoyi;Zhu Maodong;Wang Bin;Wang Hu;Qi Hongii;Shao Jianda(Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China ; University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区：[1]中国科学院上海光学精密机械研究所强激光材料重点实验室薄膜光学实验室,上海201800 [2]中国科学院大学,北京100049

出　　处：《中国激光》2018年第10期143-149,共7页Chinese Journal of Lasers

摘　　要：采用连续过滤快速横向生长技术,有效增大了磷酸二氢钾(KDP)晶体的Z向长度,提高了单位晶体II类元件的切片率。使用不同剂量的γ射线辐照II类晶体坯片后,测试其光学性能与抗激光损伤阈值。研究结果显示,不同剂量的γ射线辐照不会改变晶格内部的振动模式,但会降低912 cm^(-1)处的晶格振动强度;γ射线辐照诱导缺陷的种类不变,但随着辐照剂量的增大,缺陷浓度增大;晶体坯片的损伤阈值随着辐照剂量的增大而减小。The rapid transversal growth method based on continuous filtration is applied to effectively increase the Z-direction length of the potassium dihydrogen phosphate （KDP） crystal and improve the Ⅱ-type plate yield of the unit crystal. Different doses of γ ray are used to irradiate on the Ⅱ-type crystal. The optical performance and the laser induced damage threshold are tested. The research results show that different doses of γ ray irradiation do not change the lattice vibration modes within crystals, but can reduce the vibration intensity of the lattice at 912 cm^-1. The defect types induced by the γ ray irradiation do not change, but the defect density increases with the increase of the irradiation dose. In addition, the laser induced damage threshold of crystal plates decreases with the increase of the irradiation dose.

关 键 词：材料 KDP晶体 连续过滤 射线辐照 激光损伤阈值 晶体改性 

分 类 号：O774[理学—晶体学]