Spin-dependent tunneling of light and heavy holes with electric and magnetic fields  

作　　者：L.Bruno Chandrasekar M.Karunakaran K.Gnanasekar 

机构地区：[1]Department of Physics, The American College [2]Department of Physics, Alagappa Govt. Arts College

出　　处：《Journal of Semiconductors》2018年第11期8-12,共5页半导体学报（英文版）

摘　　要：The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.The spin-dependent tunneling of light holes and heavy holes was analysed in a symmetrical heterostructure with externally applied electric and magnetic fields. The effects of the applied bias voltage, magnetic field and reverse bias were discussed for the polarization efficiency of light holes and heavy holes. The current density of spin-up and spin-down light holes increases as the bias voltage increases and reaches the saturation, whereas the current density of spin-up heavy holes is almost negligible. The applied bias voltage and the magnetic field highly influence the energy of resonance polarization, polarization efficiency, and the current density of heavy holes more than for the light holes.

关 键 词：HETEROSTRUCTURE reverse bias current density 

分 类 号：O469[理学—凝聚态物理]