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作 者:肖天成 罗萍[1] 肖皓洋 郑心易 詹珍雅 XIAO Tiancheng; LUO Ping; XIAO Haoyang; ZHENG Xinyi; ZHAN Zhenya(State Key Lab. Of Elec. Thin Films and Integr. Dev. , Univ. of Elec. Sci. and Technol. Of China, Chengdu 610054, P. R. China)
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054
出 处:《微电子学》2018年第5期610-614,共5页Microelectronics
基 金:十三五共用信息预先研究项目(31513030204;31513030209)
摘 要:采用0.35μm CMOS工艺,设计了一种电流采样电路。分析了传统senseFET电流采样电路中采样速度与采样范围之间的制约关系。提出了一种带有采样电流补偿的电流采样电路,通过注入补偿电流,加快了采样电路环路响应速度,同时拓展了电流采样下限。该电流采样电路被用于10MHz开关频率的电流模Buck变换器中。仿真结果显示,所提出的电流采样电路在全负载范围内实现了精确快速的电感电流采样功能。A current sensor circuit was designed in a 0.35μm CMOS process.After analyzing the restrictions between the sensing speed and range in conventional current sensors,a novel senseFET current sensor with sensed current compensation scheme was proposed.A compensated current was used to flow through the current sensor to improve the sensing speed and widen the lower sensing limit.The proposed current sensor was simulated in part of a current mode buck converter operating at 10 MHz switching frequency.Simulation results showed that the proposed current sensor implemented accurate and fast current sensing over full range of load current.
关 键 词:senseFET采样电路 采样电流补偿 全负载范围
分 类 号:TN432[电子电信—微电子学与固体电子学]
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