温度对堆叠双层石墨烯层间耦合的影响  

The Influence of Temperature on Interlayer Coupling of Stacking Bilayer Graphene

作　　者：盛祥勇 任玲玲[2] 姚雅萱[2] 于盛旺[1] SHENG Xiang-yong;REN Ling-ling;YAO Ya-xuan;YU Sheng-wang(Research Institute of Surface Engineering,Taiyuan University of Technology,Taiyuan,Shanxi 030024,China;National Institute of Metrology,Beijing 100029,China)

机构地区：[1]太原理工大学表面工程研究所,山西太原030024 [2]中国计量科学研究院,北京100029

出　　处：《计量学报》2018年第6期791-796,共6页Acta Metrologica Sinica

基　　金：国家质量基础的共性技术研究与应用重点专项(2016YFF0204300)

摘　　要：将不同层数堆叠和化学气相沉积法(CVD)生长的石墨烯在室温下进行拉曼光谱表征分析其层间耦合状态,并分析了不同温度下堆叠和CVD生长的双层石墨烯温度对其层间耦合的影响。研究结果表明:室温下CVD生长双层石墨烯和堆叠双层石墨烯的层间耦合状态截然不同;在25～250℃范围内,层间没有耦合作用或存在弱耦合作用的堆叠双层石墨烯的G峰峰位温度系数小于存在电子耦合的CVD生长双层石墨烯;超过250℃后,堆叠双层石墨烯G峰峰位温度系数变为正值,层与层之间可能产生了耦合,性质发生改变;在25～400℃范围内两种材料的2D峰半峰宽和G峰/2D峰强度比变化趋势几乎相同,但堆叠双层石墨烯波动大,对温度更敏感。Interlayer coupling of stacking graphene and chemical vapor deposition grown （CVD-grown） graphene with different layers was analyzed using Raman spectroscopy at room temperature. Then bilayer graphene prepared by random stacking and CVD-grown were selected to study the influence of temperature on interlayer coupling. The results showed that the interlayer coupling between stacking bilayer graphene and CVD-grown bilayer graphene were different, there is none or weak coupled interaction in stacking bilayer graphene while CVD-grown bilayer graphene has stronger coupled interaction between layers. For G peak frequency, stacking bilayer graphene exhibits a lower value of thermal coefficient compared to CVD-grown bilayer graphene when the temperature increased from 25 ℃ to 250 ℃. When the temperature was higher than 250 ℃, a positive value of thermal coefficient of stacking bilayer graphene was observed, which indicated the occurrence of coupled interaction between the layers. Additionally, similar trends were observed for full width at half-maximum of the 2D peak and the intensity ratios of G and 2D peaks （IG/12D） of these two materials over the temperature range of 25 ℃ to 400 ℃. Moreover, stacking bilayer graphene is more sensitive to temperature change compared to CVD-grown bilayer graphene.

关 键 词：计量学 堆叠石墨烯 层间耦合 CVD生长石墨烯 拉曼光谱 温度效应 

分 类 号：TB92[一般工业技术—计量学]