940nm大功率半导体激光器后工艺优化  

Process Optimization of 940nm High Power Semiconductor Laser

作　　者：王海阔 李建军[1] 王元诚 王梦欢 袁泽旭 WANG Haikuo;LI Jianjun;WANG Yuancheng;WANG Menghuan;YUAN Zexu(Key Lab.of Opto-Electronic Technol.of the Ministry of Education,Beijing University of Technol.,Beijing 100124,CHN)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124

出　　处：《半导体光电》2018年第5期612-615,622,共5页Semiconductor Optoelectronics

基　　金：光电子技术教育部重点实验室发展基金项目(PXM2017_014204_500034);北京市教委能力提升项目(PXM2016_014204_500026);教师队伍建设-15青年拔尖项目(3011000543115002);国家科技重大专项项目(2017YFB0402800;2017YFB0402803)

摘　　要：波长为940nm的大功率半导体激光器是基于Yb∶YAG激光器的重要泵浦光源。为了制备高输出功率的940nm半导体激光器,基于非对称超大光腔波导外延结构,对芯片后制备工艺进行了优化。在芯片的侧向,引入了隔离双沟结构,以实现对侧向电流扩展的有效抑制,从而提高器件的性能。通过优化双沟的间距和深度,并结合长腔长结构,制备的940nm半导体激光器在室温且未采取任何主动散热的条件下,最高出光功率达到20.3W。High power semiconductor laser with wavelength of 940 nm is an important pumping source of Yb∶YAG laser.In order to prepare high output power 940 nm semiconductor lasers,the fabrication process of the chip is optimized based on the asymmetric superconducting cavity waveguide epitaxial structure.On the side of the chip,an isolated double trench is introduced to achieve effective suppression of lateral current expansion.By optimizing the spacing and depth of the double trench,as well as by utilizing the long cavity length structure,the performance of the device is improved.Finally,the maximum output power of the 940 nm semiconductor laser reaches 20.3 W under the condition of room temperature and without active heat dissipation.

关 键 词：半导体激光器 大功率 侧向电流扩展 隔离沟道 

分 类 号：TN248.4[电子电信—物理电子学]