缺陷晶体硅太阳电池热斑实验  

Hot-spot test for defective crystalline silicon solar cells

作　　者：蹇康 张臻[1] 梁旭丹 钱茜 宁楚珺 JIAN Kang;ZHANG Zhen;LIANG Xu-dan;QIAN Xi;NING Chu-jun(School of Mechanical and Electrical Engineering,Hohai University,Changzhou Jiangsu 213022,China)

机构地区：[1]河海大学机电工程学院,江苏常州213022

出　　处：《电源技术》2018年第11期1657-1659,共3页Chinese Journal of Power Sources

基　　金：江苏省重点研发计划(BE2017063);江苏省自然科学基金(BK20151173);江苏省普通高校研究生科研创新计划项目(SJZZ16_0095)

摘　　要：设计了室内外缺陷电池热斑情况的测试方案,将缺陷电池反接12 V直流电压,使电池片处于反向偏置状态,并对比了电池片的温度分布和漏电流大小,测试了不同反偏电压下温度分布和电流变化。提出了一种缺陷电池测试方法,将单块电池接入组件,在不同遮挡比例下测试组件的I-V、P-V曲线,对比不同类型缺陷电池的差异。The indoor and outdoor experiments were designed, which tested hot-spot situation of the defectivecrystalline silicon solar cells, and the defective solar cells were connected conversely with 12 V DC voltage, whichmade solar cells in a reverse bias state. The temperature distribution and leakage current size were compared, andthe temperature distribution and current variation at different reverse bias voltages were tested .A defective solar cellstest method was proposed. The single cell was connected with module, then detected the I-V and P-V curves of themodule under different shading ratios, and the differences of different types of defective batteries were compared.

关 键 词：缺陷电池 反向偏置 热斑 

分 类 号：TM914[电气工程—电力电子与电力传动]