沉积温度对Na0.5Bi0.5TiO3铁电薄膜结构与性能的影响  

Effect of Deposition Temperature on Structural and Properties of Na0.5Bi0.5TiO3 Ferroelectric Thin Films

作　　者：宋建民[1,2] 杨帆[2] 代秀红[1] 梁杰通 高洁 赵磊 刘保亭[1] SONG Jianmin;YANG Fan;DAI Xiuhong;LIANG Jietong;GAO Jie;ZHAO Lie;LIU Baoting(Hebei Province Key Laboratory of Optoelectronie Information Materials;College of Physics Science ＆ Technology,Hebei University,Baoding 071002,Hebei,China;2.College of Science,Agriculture University of Hebei,Baoding 071001,Hebei,China)

机构地区：[1]河北省光电信息材料重点实验室,河北大学物理科学与技术学院,河北保定071002 [2]河北农业大学理学院,河北保定071001

出　　处：《硅酸盐学报》2018年第10期1335-1339,共5页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(11374086,11474174);河北省自然科学基金(E2014201188,E2014201063,A2018201168);河北农业大学基金(20160614)项目

摘　　要：利用脉冲激光沉积法和磁控溅射法在（001）SrTiO3单晶基片上构架了铁电异质结电容器Pt/La0.5Sr0.5CoO3/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3/SrTiO3（LSCO/NBT/LSCO/STO）。利用原子力显微镜（AFM）、X射线衍射仪（XRD）、铁电测试仪和压电力显微镜（PFM）研究了沉积温度对Na0.5Bi0.5TiO3（NBT）铁电薄膜的表面形貌、微结构和电学性能的影响。AFM结果表明,NBT薄膜晶粒尺寸随着沉积温度的增加先变小后增大。XRD结果显示,不同沉积温度下生长的NBT薄膜均为（00l）择优取向结构。铁电测试仪和PFM结果表明,NBT薄膜的铁电和压电性能随着沉积温度的增加先增大后减小,650℃生长的薄膜具有最高的剩余极化强度（19.6μC/cm^2）和最大的有效压电系数（146 pm/V）。The Pt/La0.5Sr0.5CoO3/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3/SrTiO3（Pt/LSCO/NBT/LSCO/STO） heterostructures were fabricated on（001） Sr TiO3 substrates via RF magnetron sputtering and pulsed laser deposition. The impact of deposition temperature on the structure and electric properties of NBT thin films was investigated by atomic force microscopy（AFM）, X-ray diffraction（XRD）, ferroelectric test and piezoelectric force microscopy（PFM）, respectively. The results show that the grain size of NBT thin films first decreases and then increases with the increase of temperature. The XRD patterns indicate that all of the NBT films grown at different temperatures display the（00 l） preferred orientation. The ferroelectric and piezoelectric properties of NBT thin films both first increase and then decrease with increasing temperature. The film grown at 650 °C possesses the maximum remnant polarization（i.e., 19.6μC/cm^2） and effective piezoelectric coefficient（i.e., 146 pm/V）.

关 键 词：钛酸铋钠薄膜 异质结 剩余极化强度 压电系数 

分 类 号：O484[理学—固体物理]