渗硼镀膜法制备TiBN薄膜的电子导电性及其潜在应用前景  

Electrical conductivity and potential application of TiBN film prepared by aboronizing deposition method

作　　者：胡建东[1] S.TOSTO 程春明 王红海 HU Jiandong;S.TOSTO;CHENG Chunming;WANG Honghai(Colleage of Materials Science and Engineering,Jilin University,Changchun 130025,China;Dept.of Advanced PhysicalTechnology and New Materials of ENEA,Roma 00060,Italy;Jiangxi Jiatao Technology Ceramics Co.,Ltd,Jiujiang 332000,Jiangxi Province,China;Suzhou Junhai Coating Technology Co.,Ltd,Suzhou 125121,Jiangsu Province,China)

机构地区：[1]吉林大学材料科学与工程学院,吉林长春130025 [2]欧洲核能开发署,先进物理技术和新材料研究部,意大利罗马00060 [3]江西嘉陶无机材料有限公司,江西九江332000 [4]苏州均海镀膜科技有限公司,江苏苏州215121

出　　处：《电子元件与材料》2018年第11期55-60,共6页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(51172088)

摘　　要：报道一种新的TiBN薄膜制备方法和薄膜的导电性,该方法是以B_4C,SiC和KBF_4作为固体渗硼剂,钛粉末材料作为Ti源,采用低成本固体渗硼法(以下简称渗硼镀膜法)制备成TiBN薄膜。对该薄膜的电阻率进行了系统检测,发现薄膜具有优良的电子导电性,电阻率达到0.495×10^(-7)Ω·m,最好电阻率数值达到0.0778×10^(-7)Ω·m,优于用PVD方法在同样基体上制备的TiN薄膜的电阻率(82.7×10^(-7)Ω·m);优于Cu的电阻率(0.168×10^(-7)Ω·m);优于石墨的电阻率(平行于石墨层的(25～50)×10^(-7)Ω·m和垂直于石墨层的30000×10^(-7)Ω·m);优于无定型碳的电阻率((5000.0～8000.0)×10^(-7)Ω·m)。经300,400,500和600℃,5 h氧化处理的TiBN薄膜仍然保持良好的导电性(600℃时电阻率为0.641×10^(-7)Ω·m)。TiBN薄膜厚度为微米级,颗粒尺寸为纳米级,可用于制备新型、高效微电子器件、储能器电极、隔离体、集电体,在电子元件和储能器领域有潜在的应用前景。A new and economical method is reported to fabricate TiBN film using B4C, SiC and KBF4 as boronizing agent andTi powder as Ti source, which is thereafter named boronizing deposition method in this work. The electrical resistivity of the TiBNfilms was systematically studied. It was found that the TiBN film possesses excellent electrical conductivity with resistivity from 0. 495×10-7Ω·m to its maximum value of 0. 0778×10^（-7）Ω·m, which is better than that of PVD coated TiN film （82. 7×10^（-7）Ω·m）, Cu（0. 168×10^（-7）Ω·m）, graphite （ （25 –50） ×10^（-7）Ω·m along the basal plane and 30000×10^（-7）Ω·m perpendicular to basal plane） and amorphous carbon （ （5000. 0-8000. 0） ×10^（-7）Ω ·m）. The excellent conductivity of TiBN films remains after oxidized attemperatures of 300, 400, 500 and 600 ℃ for 5 h, which is 0. 641×10^（-7）Ω·m for 600 ℃. The thickness of the film is below 1 μmand the grain size is in the submicron scale. Such TiBN film is promising for such applications as electrode, separator, currentcollector to make various energy store devices and microelectronic devices.

关 键 词：TiBN薄膜 固体渗硼剂 渗硼镀膜法 电阻率 导电性 储能装置 

分 类 号：TN304[电子电信—物理电子学]