基于三谐振网络的超宽带低噪声放大器  

Design of an ultrawideband low noise amplifier by triple-resonance network

作　　者：刘丹丹 马铭磷[1] 蔡兴龙[1] LIU Dandan;MA Minglin;CAI Xinglong(The College of Information and Engineering,Xiangtan University,Xiangtan 411105,Hunan Province,China)

机构地区：[1]湘潭大学信息工程学院,湖南湘潭411105

出　　处：《电子元件与材料》2018年第11期71-77,84,共8页Electronic Components And Materials

基　　金：湖南省自然科学基金项目(2015JJ2140; 2015JJ2142)

摘　　要：设计并研究了一种工作频带为4～18 GHz的超宽带低噪声放大器(UWB LNA),该放大器基于TSMC 0. 18μm CM OS工艺,通过在放大级采用三谐振匹配网络技术不仅提高了电路的增益,而且拓宽了电路的频带。此外,通过引入衬底偏置技术使电路的功耗下降。利用射频电路设计与仿真工具软件ADS(Advanced Design System)对电路进行优化仿真,并分析了温度以及工艺角对电路的影响。仿真结果表明,该放大器在室温25℃的状态下,工作带宽为4～18 GHz,增益为15. 95～18. 73 d B,增益的平坦度为2. 78 d B,噪声系数小于4. 9 d B,其中最小的噪声系数为3. 22 d B,电路的工作电压为0. 9 V,功耗仅为5. 715 mW,该放大器可广泛应用于低功耗、宽频带的射频集成电路中。An ultra-wideband low noise amplifier with a bandwidth of 4-18 GHz was designed and researched. The amplifierwas based on the TSMC 0. 18 μm CMOS process, and the gain and bandwidth were improved by adopting a triple - resonancematching network technique. In addition, the power consumption was reduced by introducing a forward body bias technique. Thecircuit was optimized and simulated by ADS, and the influence of temperature and process corner was analyzed. The results show thatthe amplifier operates at a temperature of 25 ℃. The operating bandwidth is 4-18 GHz, and the gain is from 15. 95 dB to 18. 73 dB.The gain flatness is 2. 78 dB. The noise figure is less than 4. 9 dB with a minimum of 3. 22 dB. The operating voltage of the circuit is0. 9 V, and the power consumption is only 5. 715 mW. The amplifier can be widely used in low- power and wide - band radiofrequency integrated circuit.

关 键 词：无线通信 共栅极结构 三谐振匹配网络技术 低噪声放大器 超宽带 增益 

分 类 号：TN722.3[电子电信—电路与系统]