改进窗函数下的忆阻器特性分析和研究  

Characteristics of memristor under improved window function

作　　者：刘晓倩 孙岩洲[1] 赵铁英[1] LIU Xiaoqian;SUN Yanzhou;ZHAO Tieying(School of Electrical Engineering and Automation,Henan Polytechnic University,Jiaozuo 454000,Henan Province,China)

机构地区：[1]河南理工大学电气工程与自动化学院,河南焦作454000

出　　处：《电子元件与材料》2018年第11期78-84,共7页Electronic Components And Materials

基　　金：国家自然科学及河南人才培养联合基金资助项目(U1204506)

摘　　要：基于杂质漂移机理,分析了忆阻器的导电过程,为了更加准确地模拟忆阻器内部离子的实际迁移情况,提出了一种改进的窗函数模型。基于MATLAB软件工具研究了忆阻器的伏安特性,进而分别研究了传统窗函数和改进窗函数模型下的滞回特性,通过仿真对比分析结果表明:改进的忆阻器模型不仅具有可调性和高灵活性,还解决了"边界锁死"问题;忆阻器的滞回曲线呈现出明显的优越性;在频率允许范围内,忆阻器的伏安特性会随着频率的增大而缩减,当频率趋于无穷大时,呈现出一条直线,则表现出普通电阻元件特性。Based on the dopant drift mechanism, the conductive process of memristor was analyzed. In order to simulate theactual migration of ions inside memristor accurately, an improved window function model was proposed. The I-V characteristics ofmemristor were studied by using MATLAB software. Then the I-V characteristics of memristor models under the traditional windowfunction and improved window function were studied respectively. The simulation and comparison analysis results show that theimproved memristor model not only has scalability and high flexibility, but also solves the problem of “boundary lock”. The pinchedhysteresis loops of the memristor show obvious advantages. Within the frequency allowable range, the I -V characteristic of thememristor decreases as the frequency increases and shows a straight line when the frequency approaches infinity, which presents thecharacteristic of resistor.

关 键 词：忆阻器 伏安特性 窗函数 可调性 边界锁死 滞回曲线 

分 类 号：TN60[电子电信—电路与系统]