Fabrication of low-resistance LaNi_xO_(3+δ) thin films for ferroelectric device electrodes  

作　　者：Mi Xiao Zebin Zhang Weikang Zhang Ping Zhang Kuibo Lan 

机构地区：[1]School of Electrical and Information Engineering & Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University

出　　处：《Journal of Rare Earths》2018年第8期838-843,共6页稀土学报（英文版）

基　　金：support from the Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education (Tianjin University)

摘　　要：LaNiO3 thin films with different La/Ni ratios were deposited on Si substrates by sol-gel process. The electrical resistivities of LaNixO3＋δfilms with different La/Ni ratios were measured by four-probe method.LaNi（0.95）O3＋δthin film has the lowest resistivity. First-principle calculations show that LaNi（0.95）O3＋δhas the largest Ni-O-Ni bond angle and the shortest Ni-O bond length, which means LaNi（0.95）O3＋δhas the strongest metallic property, hence, the electrical resistivity is the lowest. Au/PZT（PbZr（0.52）Ti（0.48）O3）/LaNixO3＋δand Au/PZT/Pt ferroelectric capacitors were fabricated to evaluate LaNixO3＋δas a bottom electrode. It is shown that fatigue properties of PZT films can be significantly improved by using LaNixO3＋δinstead of Pt as the bottom electrode. The Ⅰ-Ⅴ test results of PZT films show that LaNi（0.95）O3＋δas bottom electrode can reduce the threshold voltages of PZT films, suggesting that La/Ni ratio in LaNixO3＋δas a large influence on the film properties.LaNiO3 thin films with different La/Ni ratios were deposited on Si substrates by sol-gel process. The electrical resistivities of LaNixO3＋δfilms with different La/Ni ratios were measured by four-probe method.LaNi（0.95）O3＋δthin film has the lowest resistivity. First-principle calculations show that LaNi（0.95）O3＋δhas the largest Ni-O-Ni bond angle and the shortest Ni-O bond length, which means LaNi（0.95）O3＋δhas the strongest metallic property, hence, the electrical resistivity is the lowest. Au/PZT（PbZr（0.52）Ti（0.48）O3）/LaNixO3＋δand Au/PZT/Pt ferroelectric capacitors were fabricated to evaluate LaNixO3＋δas a bottom electrode. It is shown that fatigue properties of PZT films can be significantly improved by using LaNixO3＋δinstead of Pt as the bottom electrode. The Ⅰ-Ⅴ test results of PZT films show that LaNi（0.95）O3＋δas bottom electrode can reduce the threshold voltages of PZT films, suggesting that La/Ni ratio in LaNixO3＋δas a large influence on the film properties.

关 键 词：LANIO3 Thin film SOL-GEL Electrical property First-principle calculation Rare earths 

分 类 号：TB383.2[一般工业技术—材料科学与工程]