缓冲层Ta对退火Co/Cu/Co薄膜微观结构和界面互扩散的影响  

Effect of Ta Buffer on Microstructure and Interdiffusion of Annealed Co/Cu/Co Film

作　　者：彭晓文 陈冷[1] PENG Xiaowen;CHEN Leng(School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083)

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《材料导报》2018年第22期3931-3935,共5页Materials Reports

基　　金：国家自然科学基金(51171018)

摘　　要：用直流磁控溅射法在Si/SiO_2基底上制备了Co/Cu/Co薄膜和加入缓冲层的Ta/Co/Cu/Co薄膜,用扫描电子显微镜、原子力显微镜、X射线衍射和俄歇电子能谱研究了薄膜的微观结构、表面形貌、织构和界面互扩散现象。结果表明:退火后薄膜中均存在{111}和{002}衍射峰,加入缓冲层Ta后,Co/Cu/Co薄膜的衍射峰强度明显增强,并存在较强的{111}纤维织构,薄膜表面孔洞及粗糙度大幅减小。退火后薄膜界面处产生互扩散现象,层状结构被破坏。缓冲层Ta提高了薄膜与基底材料间的润湿性,可有效缓解界面互扩散现象。Co/Cu/Co film and Ta/Co/Cu/Co film with buffer layer was prepared on Si/SiO 2 substrate by DC magnetron sputtering method. The microstructure, surface morphology, texture and interlayer interdiffusion phenomenon of the film were investigated by scanning electron microscope, atomic force microscope, X-ray diffraction and Auger electron energy spectrum. The experimental results indicated that {111} and {002} diffracation peaks were observed during annealing in both kinds of the Co/Cu/Co film. Stronger {111} diffracation peaks and {111} fibre texture exited in Ta/Co/Cu/Co multilayers than SiO 2/Co/Cu/Co multilayers. Addition of Ta buffer decreased the hole density and the roughness of the film. Furthermore, interdiffusion of Co and Cu occured at the interface, as a result the film lamellar structure was destroyed. The addition of Ta buffer increased the wettability between Co/Cu/Co film and substrate, led to an improvement of microstructure and decreased the interface interdiffusion.

关 键 词：巨磁电阻(GMR)薄膜 缓冲层钽 退火 织构 互扩散 

分 类 号：TB383[一般工业技术—材料科学与工程]