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作 者:柳钰[1] 梁昌慧[1] 梅策香[1] 刘婷[1] LIU Yu;LIANG Changhui;MEI Cexiang;LIU Ting(School of Physics and Electronic Engineering,Xianyang Normal University,Xianyang 712000,Shaanxi,China)
机构地区:[1]咸阳师范学院物理与电子工程学院,陕西咸阳712000
出 处:《咸阳师范学院学报》2018年第6期50-52,共3页Journal of Xianyang Normal University
基 金:陕西省教育厅科研计划项目(14JK1803);咸阳师范学院科研基金项目(XSYK17008);咸阳师范学院"青年骨干教师"培养项目(XSYGG201603)
摘 要:材料表面产生二次电子发射会对器件的正常工作和使用寿命产生重大影响,因此对于抑制二次电子发射系数的研究显得越来越重要。该实验中选择通过改变材料表面结构的方法抑制二次电子发射,对材料表面进行真空溅射镀膜,在表面镀上一层二次电子发射系数较小的材料,实验中选择一层40 nm厚的Ta-C薄膜。实验结果表明:未经处理的基片二次电子发射系数峰值为2.15左右,经过镀膜处理的样片二次电子发射系数峰值为1.39,减少了35%,这说明通过镀膜的方法能有效减小材料表面二次电子发射系数。Secondary electron emission from the surface of the material has a significant impact on the normal operation and service life of the device. Therefore, research on suppressing the secondary electron emission coefficient is becoming more and more important. In the experiment in which a40-nm thick Ta-C film was selected, the secondary electron emission was suppressed by changing the surface structure of the material, with the surface of the material vacuum sputter coated, and a layer of material with a small secondary electron emission coefficient plated on the surface. The experimental results show that the peak value of the secondary electron emission coefficient of the untreated substrate is about 2.15. However, the peak value of the secondary electron emission coefficient of the sample treated by coating is 1.39, which is reduced by 35%. This fully demonstrates that the method of coating can effectively reduce the secondary electron emission coefficient of the material surface.
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