新型大面积Si-PIN探测器的研制  

Development and performance measurement of large area Si-PIN detectors

作　　者：苏丹[1] 顾宪松 丰树强[1] 赵潇[1] 张国光[1] 王霞[2] SU Dan;GU xiansong;FENG Shuqiang;ZHAO Xiao;ZHANG Guoguang;Wang Xia(China Institute of Atomic Energy,Beijing 102413,China;Beijing Institute of Technology,School Optics and Photonics,Beijing 100081,China)

机构地区：[1]中国原子能科学研究院,北京102413 [2]北京理工大学光电学院,北京100081

出　　处：《光学技术》2018年第6期744-746,共3页Optical Technique

摘　　要：采用平面工艺制备了大面积Si-PIN探测器,探测器厚度300μm,直径分别Φ50mm、Φ60mm。在室温环境下测量了探测器的漏电流及226 Ra-α粒子能谱响应。结果表明大面积Si-PIN探测器具有耐压能力强、漏电流小、能量分辨率高等优点,能够满足核辐射探测领域的相关应用。Large area Si-PIN detectors with 300μm thick,50 mm diameter and 60 mm diameter,was fabricated by planar technology.The measurement of leakage current are measured at room temperature.The spectra of the detectors for 226 Ra-αparticles were also provided.The results indicated the large area Si-PIN detectors had high-voltage endurabllity,lower leakage current,high energy resolution,and could applied in the filed of nuclear radiation measurement.

关 键 词：SI-PIN探测器 时间响应 能谱 线性电流 

分 类 号：TH74[机械工程—光学工程]