光子探测器在芬兰HIP和克罗地亚RBI的研发制作（英文）  

Photon Detector Research at Helsinki Institute of Physics(HIP)and at Ruder Bokovi Institute(RBI)

作　　者：Brücken Erik Gadda Akiko Ott Jennifer Naaranoja Tiina Martikainen Laura Karadzhinova-Ferrer Aneliya Kalliokoski Matti Golovlova Maria Kirschenmann Stefanie Litichevskyi Vladyslav Petrine Ana Luukka Panja Harkonen Jaakko Karadzhinova-Ferrer Aneliya;Kalliokoski Matti;Golovlova Maria;Kirschenmann Stefanie;Litichevskyi Vladyslav;Petrine Ana;Luukka Panja;Harkonen Jaakko(Helsinki Institute of Physics,Gustaf Hallstromin Katu 2,University of Helsinki,Helsinki FI-00014 Finland;Ru er Bo kovi Institute,Bijeni ka Cesta 54,Zagreb 10000 Croatia;Advacam Oy,Tietotie 3,Espoo FI-02150 Finland;Specom Oy,Tekniikantie 2 A 326,Espoo FI-02150,Finland)

机构地区：[1]赫尔辛基物理研究所(HIP),芬兰赫尔辛基FI-00014 [2]罗德波士克维奇研究所(RBI),克罗地亚萨格勒布10000 [3]艾得维堪公司,芬兰艾斯堡FI-02150 [4]斯拜得康公司,芬兰艾斯堡FI-02150

出　　处：《湘潭大学学报（自然科学版）》2018年第4期115-120,共6页Journal of Xiangtan University(Natural Science Edition)

基　　金：Various types of semiconductor detectors,detector physics and modeling

摘　　要：该文描述了碲化镉(CdTe)探测器,硅漂移探测器和外加一层转换闪烁体硅探测器(SiS)的设计与制作方法 .这些硅及CdTe芯片制作工艺及其连接方法是在芬兰的Micronova中心完成的.与硅工艺不同的是,CdTe工艺必须在低于150℃的温度下完成.我们因此专门为CdTe探测器开发了一种低温原子层淀积的氧化铝(Al2O3)薄膜工艺,大小为(10×10×1)mm3的CdTe晶圆由一种无接触的光刻工艺完成.探测器性能是由电流-电压(I-V),电容-电压(C-V)、瞬间电流方法和精确微质子数方法来检测的.实验结果与具有材料和缺陷参数的TCAD模拟结果相符.In this report,we describe the design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride （CdTe） crystals, silicon drift detectors （SDD） and silicon detectors attached with conversion layer scintillator materials （SiS）. The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150 ℃. Thus, we have developed a low temperature passivation layer processes of aluminum oxide （Al 2O 3） grown by atomic layer deposition （ALD） method. The CdTe crystals of the size of （10×10×1） mm 3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by I-V,C-V , transient current technique （TCT） and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.

关 键 词：硅探测器 碲化镉探测器 I-V、C-V 和TCT方法 原子层淀积(ALD)法 

分 类 号：TN6[电子电信—电路与系统]