离子束诱导电荷显微术的现状与发展趋势  

The status and new trends of ion beam induced charge technique

作　　者：陆荣荣[1] 裘惠源[1] 朱德彰[1] 

机构地区：[1]中国科学院上海原子核研究所,上海201800

出　　处：《核技术》2002年第8期591-596,共6页Nuclear Techniques

基　　金：国家自然科学基金 (19975 0 6 5 )

摘　　要：离子束诱导电荷显微术 (IBIC)是核子微探针显微成像技术的又一新发展 ,它具有低束流(fA量级 )、高效率的特点 ,已被广泛应用于半导体材料和微电子材料研究中。本文简述了离子束诱导电荷显微术 (IBIC)的原理和实验方法 ,综述了IBIC研究的现状和进展。Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronical materials. The principle and the experimental method of the IBIC technique were described and reviewed its status and new trends were reviewed.

关 键 词：发展趋势 核子微探针 离子束诱导电荷显微术 原理 实验方法学 应用 微电子学 

分 类 号：O571.33[理学—粒子物理与原子核物理] O572.21[理学—物理]