Sputtering Deposition of Ultra-thin α-Fe_2O_3 Films for Solar Water Splitting  

作　　者：Lichao Jia Karsten Harbauer Peter Bogdanoff Kluas Ellmer Sebastian Fiechter 

机构地区：[1]Helmholtz-Zentrum Berlin fr Materialien und Energie,Institute for Solar Fuels,Hahn-Meitner-Platz 1,14109 Berlin,Germany

出　　处：《Journal of Materials Science & Technology》2015年第6期655-659,共5页材料科学技术（英文版）

基　　金：supported by the German Federal Ministry of Education and Research (BMBF) under contract#03SF0353A"H_2-NanoSolar"

摘　　要：Ultra-thin α-Fe2O3（hematite） films have been deposited by radio frequency（RF） sputtering technique and photoelectrochemically investigated towards their ability to oxidize water.By varying the deposition power and time as well as the sputter gas flow（argon）,the microstructure and morphology of the film were optimized.It was found that the increment in the film thickness resulted in the loss of efficiency for solar water oxidation.The film with a thickness of 27 nm exhibited the best result with a maximum photocurrent of 0.25 mA cm-2at 1.23 VRHE.Addition of small amounts of O2to the sputter gas improved the photoactivity significantly.Ultra-thin α-Fe2O3（hematite） films have been deposited by radio frequency（RF） sputtering technique and photoelectrochemically investigated towards their ability to oxidize water.By varying the deposition power and time as well as the sputter gas flow（argon）,the microstructure and morphology of the film were optimized.It was found that the increment in the film thickness resulted in the loss of efficiency for solar water oxidation.The film with a thickness of 27 nm exhibited the best result with a maximum photocurrent of 0.25 mA cm-2at 1.23 VRHE.Addition of small amounts of O2to the sputter gas improved the photoactivity significantly.

关 键 词：Thin film Aematite Sputtering deposition Photoelec 

分 类 号：TQ138.11[化学工程—无机化工]