Silicon Film Fabrication by Liquid Phase Epitaxy at Low Temperature  

作　　者：QIANYongbiao SHIWeimin 等 

机构地区：[1]SchoolofMaterialsScienceandEngineering,JiadingCampus,ShanghaiUniversity,Shanghai201800,CHN [2]SchoolofMa

出　　处：《Semiconductor Photonics and Technology》1998年第1期18-24,共7页半导体光子学与技术（英文版）

摘　　要：Low temperature liquid phase epitaxy of silicon thin films was successfully carried out at a temperature of (400～500)℃,using Au/Bi alloy as a Si-saturated Sn solution was used to protect the substrate surface,preventing effectively the oxidation of silicon.The grown Si thin films were identified by SEM,AES and C-V measurements.ＳｉｌｉｃｏｎＦｉｌｍＦａｂｒｉｃａｔｉｏｎｂｙＬｉｑｕｉｄＰｈａｓｅＥｐｉｔａｘｙａｔＬｏｗＴｅｍｐｅｒａｔｕｒｅ①ＱＩＡＮＹｏｎｇｂｉａｏ，ＳＨＩＷｅｉｍｉｎ，ＣＨＥＮＰｅｉｆｅｎｇ，ＭＩＮＪｉａｈｕａ，ＧＵＹｏｎｇｍｉｎｇ，ＧＵＯＹａｎｍｉｎｇ...

关 键 词：Low Temperature LPE Silicon Film Solar Cell 

分 类 号：TM914.4[电气工程—电力电子与电力传动]