Studies on Three-electrode Semiconductor Lasers  

Studies on Three-electrode Semiconductor Laserss

作　　者：SUN Hong-xia LU Hongchang (Southwest Jiaotong University, Chengdu 610031, CHN) 

出　　处：《Semiconductor Photonics and Technology》1998年第2期74-77,98,共5页半导体光子学与技术（英文版）

摘　　要：Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained.Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained.

关 键 词：Optical Output Power Ray Method Semiconductor Laser 

分 类 号：TN248.4[电子电信—物理电子学]