Ga掺杂浓度对溶胶-凝胶法制备GZO薄膜光电性能的影响  

Influences of Ga Doping Concentration on the Photoelectrical Properties of GZO Thin Films Prepared by Sol-Gel Method

作　　者：王海林[1] 孙宜华[1] 莫观孔 方亮 王磊[2] 黄妞[1] 

机构地区：[1]三峡大学材料与化工学院,宜昌443002 [2]桂林理工大学广西新能源与建筑节能重点实验室,桂林541004

出　　处：《人工晶体学报》2016年第3期743-748,共6页Journal of Synthetic Crystals

基　　金：广西建筑新能源与建筑节能重点实验室开放基金(A0008)

摘　　要：采用溶胶-凝胶法在玻璃基片上制备掺镓氧化锌透明导电薄膜,用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计、霍尔效应仪等测试分别表征GZO薄膜的晶体结构、表面形貌、光电性能等,研究Ga掺杂量对GZO薄膜性能的影响。结果表明:所制备的GZO薄膜均为六方纤锌矿结构并有沿c轴择优生长趋势,随着Ga掺杂量的增加,薄膜透过率先增加再减小,当Ga掺杂量为4at%时透过率最高,可见光区平均透过率达97.4%,薄膜电阻率则随掺杂量增加而下降,在Ga掺杂量为5at%时达最小值7.62×10-3Ω·cm。Transparent conductive thin films of Ga-doped Zn O were grown on glass substrates using sol-gel method. Crystallinity levels,surface morphology,optical and electrical properties of the thin films were systematically investigated by the X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, and Hall measurement system, respectively. The influences of Ga dopant concentration on the properties of GZO thin films were investigated. It is indicated that the GZO thin films exhibit polycrystalline with a hexagonal wurtzite structure and tend to prefer growing along the c-axis. The transmittance firstly increases and then decreases with the increasing of the doping concentration. The highest average transmittance in the visible wavelength region reaches 97. 4% when Ga doping content is4at%,while the resistivity decreases with the increasing of the doping concentration. The minimum resistivity reaches 7. 62 × 10-3Ω·cm when Ga doping level is 5at%.

关 键 词：溶胶-凝胶法 GZO薄膜 透过率 电阻率 

分 类 号：O484.1[理学—固体物理]