Ga_xIn_(1-x)As/GaInAsP应变量子阱结构能带的计算  

Calculation of band structure of Ga_x In_1-x_As/GaInAsP strained quantum wells

作　　者：高少文[1] 陈意桥[1] 李爱珍[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2002年第3期218-222,共5页Journal of Functional Materials and Devices

摘　　要：对含有Luttinger-Kohn哈密顿量的有效质量方程,利用S.L.Chuang提出的传递矩阵法,计算了量子阱中不同Ga组分的GaxIn1-xAs/GaInAsP应变量子阱结构的能带,该结构可被选作980nm光通信泵浦激光器的有源层。研究还得到了GaxIn1-xAs/GaInAsP双应变量子阱结构中电子和空穴的能级以及能级的色散关系。The band structure of Ga x In 1-x As /GaInAsP strained quantum wells i s calculated by using Luttinger -Kohn Hamiltonian -based propagation -matrix method pr esented by S.L.Chuang.This kind band structure can be chose n as an active layer of 980nm pump lase r for optical com -munications.The energy levels of electrons and holes in Ga x In 1-x As /GaInAsP strained quantum wells,as well as their dispersion re lations are obtained.

关 键 词：GaInAs/GaInAsP 应变量子阱 色散 能带 粒体激光器 

分 类 号：TN248.4[电子电信—物理电子学]