原料掺杂对多晶ZnS热压工艺及其性能的影响  

Hot-pressing Technique and Properties of Polycrystal ZnS Affected by Doping

作　　者：李洪生 李尔龙 徐运生 

机构地区：[1]中非人工晶体研究院

出　　处：《武汉理工大学学报》2002年第9期15-17,共3页Journal of Wuhan University of Technology

摘　　要：采用热压法制备多晶 Zn S时 ,由于 Zn S是市售原料 ,杂质含量较多 ,必须进行提纯处理。即使如此 ,在热压过程中 ,晶体内仍然存在空穴、晶格缺陷及少量气孔等 ,影响材料透过性能。通过原料掺杂 ,使原料中掺入晶格常数小于Zn S的硫化物 ,可以起到固溶强化作用 ,减少空穴及气孔存在 ,提高晶体致密度 ,从而提高红外透过率 ;另外 ,可以使 Zn S晶体结晶压力降低 ,即降低热压压力 。Sulfide doped polycrystal ZnS with high optical and mechanical properties were prepared by hot pressing method. The relationship between the different sulfides doped polycrystal ZnS and growth parameter was investigated. Polycrystal ZnS manufacture procedure was optimized as: growth temperature 900 ℃,pressure 80 MPa and cooling rate 50 ℃/h. Based on the doping technique, low strength die was used to develop the high quality polycrystal ZnS.

关 键 词：工艺 热压 多晶ZnS 原料掺杂 红外晶体 硫化锌 

分 类 号：O786[理学—晶体学]