超大电流密度低压二极管研究  

Research on the low breakover diodewith very large current density and very low voltage drop

作　　者：张斌[1] 张海涛[1] 王均平[1] 

机构地区：[1]清华大学核能研究院,北京102201

出　　处：《半导体技术》2002年第10期68-72,共5页Semiconductor Technology

摘　　要：论述了低压大电流行业所用整流二极管的超大电流密度、超低功耗设计的重要性。介绍了设计方法、工艺措施及实验结果。分析表明,只要保证基区宽度不大于小电流下的载流子扩散长度,保证足够的表面扩散浓度,就能保证二极管在1000A/cm2的特大电流密度下仍有很低的压降。This paper discusses the low breakover voltage diode with very large currentdensity and very low voltage drop. The design, technology and tests are introduced. The resultsindicate: it is able to remain very low voltage drop at the current density 1000A/cm2, as the enoughsurface concentration is performed and the width of base is less than the twice bipolar diffusionlength at the low current density.

关 键 词：超大电流密度 低压二极管 低电压 整流二极管 

分 类 号：TN313.5[电子电信—物理电子学]