不同衬底对单层二硫化钼光学性质的影响研究  

THE EFFECTS OF DIFFERENT SUBSTRATES ON OPTICAL PROPERTIES OF MONOLAYER MoS_2

作　　者：周朝迅[1] 廖源[1,2] 周献亮 余庆选[1] 董振超 

机构地区：[1]中国科学技术大学物理系,合肥230026 [2]合肥微尺度物质科学国家实验室,合肥230026

出　　处：《低温物理学报》2015年第6期466-471,共6页Low Temperature Physical Letters

基　　金：中国科技部(批准号:2011CB921402);国家自然科学基金(批准号:11327805;21333010;91421314);安徽省自然科学基金(批准号:1408085ME91)资助的课题~~

摘　　要：我们通过化学气相沉积法成功地在石英、蓝宝石和SiO_2/Si衬底表面生长出单层二硫化钼,然后将SiO_2/Si表面的样品转移到金膜和另一片SiO_2/Si衬底表面,并对这四种不同衬底上的单层二硫化钼的荧光光谱和拉曼光谱进行研究.结果发现不同的衬底可以通过两种方式影响二硫化钼的拉曼和荧光光谱:一是应力作用使E12g拉曼特征峰发生移动,同时改变直接带隙的带宽;二是不同类型的掺杂影响A1g拉曼特征峰位,并改变光跃迁中的中性激子辐射复合和带电激子辐射复合过程的比重,从而使荧光光谱中的A1峰位发生移动.Monolayer MoS_2 was successfully synthesized on a SiO_2/Si,sapphire and quartz substrate by chemical vapor deposition method.Then the samples on SiO_2/Si substrate were be transferred to a gold film and a new SiO_2/Si substrate,respectively.We study the Raman and photoluminescence(PL)spectroscopy from monolayer MoS_2 on the four different substrates.Experimental results show that the substrate can affect the Raman and PL in two ways.Firstly,the strains shift the position of E12 gRaman mode peak,meanwhile change the size of direct band gap.Secondly,different type doping affect the peak position of A1 gRaman mode,and switch the optical transition process between trion recombination and exciton recombination,which results in the shifting of PL peak.

关 键 词：单层二硫化钼 荧光光谱 拉曼光谱 应力 掺杂 

分 类 号：O614.612[理学—无机化学]