AST液相掺杂对低电阻率、高抗电强度BaTiO_3半导瓷显微结构及电性能影响  

The effect on the microstructure and electrical properties of AST quantities

作　　者：姜胜林[1] 周东祥[1] 龚树萍[1] 汪小红[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《功能材料》2002年第5期532-533,共2页Journal of Functional Materials

基　　金：8 63计划资助项目 (71 5 0 0 6 0 0 80 ) ;湖北省自然科学基金资助项目 (2 0 0 1ABB0 1 9)

摘　　要：通过改变低电阻率BaTiO3半导体陶瓷中液相添加剂AST的含量 ,采用XRD和SEM显微分析方法研究了AST含量对低电阻率、高抗电强度BaTiO3半导体陶瓷显微结构的影响。研究结果指出 :BaTiO3半导体陶瓷中AST的引入量对晶界厚度的控制存在两个临界点 ,晶界厚度对低电阻率、高抗电强度BaTiO3半导体陶瓷的显微结构和电性能产生重要影响。The microstructure and the electrical properties with lower resistivity and high resisting electrical strength BaTiO 3 semiconducting ceramics were studied in this paper by changing the quantities of AST.The results indicate that there were two critical points of the grainboundary width for the AST quantities.The microstructure and the electrical properties were effected seriously by the grainboundary width.

关 键 词：显微结构 电性能 AST液相 低电阻率 高抗电强度 BaTiO3半导体瓷 

分 类 号：TN304.82[电子电信—物理电子学]