面向5G应用的毫米波CMOS射频功率放大器的研究进展  

Research progress of millimeter wave CMOS RF power amplifier for 5G applications

作　　者：彭林 章国豪 Peng Lin;Zhang Guohao(School of Information Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学信息工程学院,广东广州510006

出　　处：《电子技术应用》2019年第3期1-6,12,共7页Application of Electronic Technique

摘　　要：为满足未来激增的移动数据流量需求,5G通信系统将采用更复杂的非恒定包络调制方式,导致发射信号的峰均比很高,因而对毫米波射频功率放大器的性能提出了更严苛的要求。CMOS工艺兼具低成本和高集成度的优势,是实现5G射频模组全集成化的理想选择。介绍并对比了各类提升功率放大器效率和线性度的技术,重点阐述包络跟踪技术的研究现状,最后分析功率放大器在5G应用中的发展趋势。In order to meet the surging demand of mobile data traffic in the future, 5 G communication system will adopt a more complex non-constant envelope modulation method, resulting in high peak-to-average power ratio( PAPR) of the transmitted signal,thus putting forward more stringent requirements on the performance of millimeter-wave radio frequency power amplifier( RFPA). The CMOS process combines the advantages of low cost and high integration, making it ideal for fully integrating 5 G RF modules. This paper introduces and compares various techniques for improving the efficiency and linearity of power amplifiers(PAs), mainly expounds the research status of envelope tracking( ET) technology, and finally analyzes the development trend of power amplifiers in 5 G appli-cations.

关 键 词：5G 毫米波 CMOS 射频功率放大器 效率 线性度 包络跟踪 

分 类 号：TN722.75[电子电信—电路与系统]