MOS场效应管静电击穿原因及检测方法  

Electrostatic Breakdown of MOS Field Effect Tube and its Detection Method

作　　者：欧宝明 Ou Bao-ming(Xiamen Dnake Intelligent Technology Co.Ltd,Fujian Xiamen 361026)

机构地区：[1]厦门狄耐克智能科技股份有限公司,福建厦门361026

出　　处：《电子质量》2019年第3期65-68,共4页Electronics Quality

摘　　要：文章主要介绍MOS场效应管容易受到静电击穿损坏的原因,并从实际应用的角度,给出简单测量场效应管的方法,为维修和应用方面提供一定的参考价值。This paper mainly introduces the reason why MOSFETs are easy to be damaged by electrostatic breakdown.From the point of view of practical application,a simple measurement method of MOSFETs is given,which provides certain reference value formaintenance and application.

关 键 词：MOS管 静电 击穿 检测 

分 类 号：TN386[电子电信—物理电子学]