High temperature creep behavior of in-situ synthesized MoSi_2-30%SiC composite  

作　　者：傅晓伟 杨王玥 孙祖庆 张来启 朱静 

出　　处：《中国有色金属学会会刊：英文版》2002年第4期686-690,共5页Transactions of Nonferrous Metals Society of China

基　　金：Project ( 5 9895 15 0 -0 4-0 2 )supportedbytheNationalNaturalScienceFoundationofChina

摘　　要：The compressive creep behavior at 1?200 ～ 1?400?℃ of an in situ synthesized MoSi 2 30%SiC (volume fraction) composite and a traditional PM MoSi 2 30%SiC (volume fraction) composite is investigated. The creep rate of the in situ synthesized MoSi 2 30%SiC (volume fraction) composite is about 10 -7 s -1 under stress of 60 ～ 120?MPa, and significantly lower than that made by PM method above 1?300?℃. The reason is that the interface between SiC particle and MoSi 2 matrix in in situ synthesized SiC p/MoSi 2 is of direct atomic bonding without any amorphous glassy phase, such as SiO 2 structure. Creep deformation occurs primarily by dislocation motion and the dislocations have Burgers vectors of the type of <110> and <100>.The compressive creep behavior at 1?200 ～ 1?400?℃ of an in situ synthesized MoSi 2 30%SiC (volume fraction) composite and a traditional PM MoSi 2 30%SiC (volume fraction) composite is investigated. The creep rate of the in situ synthesized MoSi 2 30%SiC (volume fraction) composite is about 10 -7 s -1 under stress of 60 ～ 120?MPa, and significantly lower than that made by PM method above 1?300?℃. The reason is that the interface between SiC particle and MoSi 2 matrix in in situ synthesized SiC p/MoSi 2 is of direct atomic bonding without any amorphous glassy phase, such as SiO 2 structure. Creep deformation occurs primarily by dislocation motion and the dislocations have Burgers vectors of the type of <110> and <100>.

关 键 词：SIC/MOSI2复合材料 燃烧合成 金属陶瓷 

分 类 号：TB331[一般工业技术—材料科学与工程]