电子束蒸镀法制备CuIn_(0.7)Ga_(0.3)Se_2薄膜太阳电池的性能  

Characterization of CuIn_(0.7)Ga_(0.3)Se_2 films prepared by electron-beam evaporation for thin film solar cell

作　　者：王星星[1] 张福勤[1] 周俊 郑吉祥[1] 黎炳前 刘怡 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083 [2]中南大学材料科学与工程学院,长沙410083

出　　处：《中国有色金属学报》2016年第1期103-111,共9页The Chinese Journal of Nonferrous Metals

基　　金：国家重点基础研究发展规划资助项目(2011CB605803)~~

摘　　要：封装石英管真空熔炼合成CuIn0.7Ga0.3Se2（CIGS）块体,再采用电子束蒸镀此块体,制备用于太阳电池吸收层的CIGS薄膜,然后对薄膜进行不同温度的真空退火处理。分别采用XRD、EDS、SEM及光谱分析等方法,研究CIGS块体和退火薄膜的表面形貌、晶体结构、成分或者光电性能。结果表明:在1200℃、保温2 h后,采用真空熔炼获得结晶性能较好、单一黄铜矿结构的CuIn0.7Ga0.3Se2块体。随着退火温度的升高,薄膜中In-Se杂质相分解,从而获得单一相的CIGS薄膜;并且颗粒不断长大,达到1.03.5μm;成分和光学禁带不断得到优化。600℃退火薄膜是比较符合理想太阳电池要求的吸收层材料。The CuIn_(0.7)Ga_(0.3)Se_2(CIGS) thin films used as absorber layers of solar cell were deposited by electron-beam evaporation utilizing CIGS bulk synthesized by quartz-tube vacuum smelting,followed by annealing treatment in vacuum atmosphere at different temperatures.The performances of CIGS bulk and annealed films on the surface morphology,compositions,crystal microstructure and photoelectric property were studied by X-ray diffractometry(XRD),scanning electron microscopy(SEM),energy dispersive spectrometry(EDS) or spectroscopic analysis,respectively.The results show that ideal CuIn_(0.7)Ga_(0.3)Se_2 bulk with good crystallization property and single chalcopyrite structure is obtained by vacuum smelting at 1200 ℃for 120 min.With the increase of annealing temperature,single phase CIGS presents,accompanying by decomposition of In-Se impurity phase.Meanwhile,the grain size continuously grows up to 1.0-3.5μm,and the composition and optical band gap are gradually optimized.Therefore,the as-annealed film at 600 ℃ is in much more consistent with the absorber layers material of ideal solar cell.

关 键 词：太阳电池 CuIn0.7Ga0.3Se2 真空熔炼 电子束蒸镀 退火处理 

分 类 号：O611.4[理学—无机化学] TM914.42[理学—化学]