在层状铁电薄膜二极管中的界面电位降  

Voltage Drop at the Interface in Multilayer Ferroelectric Films Diode

作　　者：李兴教[1] 王宁章[1] 鲍军波[1] 邹雪城[1] 徐静平[1] 陈涛[1] LI Shao-ping 

机构地区：[1]华中科技大学电子系,武汉,430074 [2]Advanced Recording Technology Laboratory Seagate Technology,N55435 U.S.A

出　　处：《压电与声光》2002年第5期374-377,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 (5 9972 0 10 ) ;武汉理工大学材料复合新技术国家重点实验室资助项目

摘　　要：利用准分子激光原位淀积法制备了 BIT/ PZT/ BIT,PZT/ BIT和 BIT层状铁电薄膜 ,建立了一条修正的经验幂定律 I=A(ξ V) α和一个层状铁电薄膜电流密度 -电压 (I- V)曲线的近似公式 ,它包括了的非线性系数α和界面电位降特征参数 ξ。由修正的经验幂定律和 I- V曲线近似公式算出的界面电位降 Vi 与由 C- V曲线理论得出的结果一致。界面电位降与测量电容、薄膜电容及耗尽层电容有关。A modified empirical power law I=A(ξV) α and an approximate formula of I V curve of the multilayer ferroelectric thin films have been built up.It consists of the coefficient of nonlinearity of I V curve α and the parameter charactering the voltage drop of the interface, ξ .The voltage drop at the interface, V i,obtained from the empirical power law and the approximate calculation of the I V curve is consistent with that obtained form the C V curve theory.The voltage drop of interface is relevant to the measured capacitance,the film capacitance and the depletion capacitance.

关 键 词：二极管 层状铁电薄膜 界面电位降 耗尽层 

分 类 号：TN304[电子电信—物理电子学] TN31