半导体量子阱和量子线中杂质束缚能的度规法则与维里定理  

Scaling of Hydrogenic Impurity Binding Energy and Virial Theorem in Semiconductor Quantum Wells and Wires

作　　者：刘建军[1] 苏会[1] 杨国琛[2] 

机构地区：[1]河北师范大学物理学院,石家庄050016 [2]河北工业大学物理所,天津300130

出　　处：《Journal of Semiconductors》2002年第9期925-929,共5页半导体学报（英文版）

基　　金：河北省自然科学基金 (No.199181);河北省教育厅自然科学基金 (No.2 0 0 10 4)资助项目~~

摘　　要：利用变分法计算了矩形量子线和量子阱中类氢杂质束缚能的度规法则和维里定理值 .计算结果表明 :的确存在一个参数 (杂质有效玻尔半径 )可用来完全确定束缚能的值 ,而不必考虑截面的形状和尺寸 ;体系的维里定理值并不等于常数 ,而是随杂质有效玻尔半径变化 ,在阱宽较小和较大时 ,维里定理值都趋于 2 .The scaling rule for hydrogenic impurity binding energy and the Virial theorem value (potential to kinetic energy) in quantum wells and wires of rectangular cross section with three different section ratios are studied through the variational method. The results reveal that (1) A parameter (impurity effective Bohr radius a im ) that the impurity binding energy strongly depend on does exist;(2) The Virial theorem value is nonconstant but approaches 2 from above when the wire width is very small or large and the Virial theorem value versus a im does not increase monotonically due to the consideration of the correlation effect between the confined and non confined directions.

关 键 词：杂质束缚能 度规法则 维里定理 量子阱 量子线 

分 类 号：TN304[电子电信—物理电子学]