一种新的电化学方法制备CdS纳米线阵列  

A New Method to Prepare CdS Nanowire Arrays

作　　者：王银海[1] 许彦旗[2] 蔡维理[2] 牟季美[2] 

机构地区：[1]安徽大学物理系,合肥230039 [2]中国科学技术大学材料科学与工程系,合肥230026

出　　处：《物理化学学报》2002年第10期943-946,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(1997404);国家重大基础研究基金(1999-0645-01)资助项目

摘　　要：用一种新的电化学方法在多孔氧化铝模板中制备了CdS纳米线阵列体系,并用XRD、TEM对样品进行表征,结果显示CdS纳米线为立方相和六方相的多晶混合结构,对沉积机理进行了讨论 荧光光谱测量显示CdS纳米线阵列体系有三个强的紫外发光带和一个黄绿发光带 该文所使用的方法可以用来在氧化铝模板中制备其它材料的纳米线阵列体系.CdS nanowire arrays were prepared by a new electrochemical method. XRD and TEM measurements show that CdS nanowires were composed of cubic and hexagonal phases, and the mechanism of deposition was discussed based on ion diffusion. The length of the nanowire can be controlled by electrochemical deposition time and the diameter can be controlled by the aperture of porous alumina template. The method of depositting nanowires on alumina template is a general route for preparing other nanowire arrays. The photoluminescence measurements show that CdS nanowires have three ultraviolet luminescence bands and one yellow-green luminescence band.

关 键 词：电化学方法 制备 CDS 纳米线阵列 模板合成 氧化铝 硫化镉 半导体材料 

分 类 号：O646[理学—物理化学]