TiSi_2/n^+poly-Si复合结构热处理对磷再分布及RIE的影响  

Effect of Heat Treatment of TiSi_2/n^+ poly-Si Polycide Structure on Redistribution of Phosphorus and RIE

作　　者：徐秋霞 周锁京 赵玉印 

机构地区：[1]中科院微电子中心研究部,北京100010

出　　处：《Journal of Semiconductors》1991年第12期749-754,T002,共7页半导体学报（英文版）

摘　　要：本文对热处理过程中多晶硅中掺杂磷在 TiSi_2/n+poly-Si复合结构中的再分布行为和产生原因及其对RIE刻蚀的影响进行了系统的研究,提出了抑制高掺杂多晶硅中磷外扩散的方法和微图形成形应在退火前完成的建议.研制成的沟道长度为 0.6 μm的 TiSi_2polycide结构 LDD NMOSFET’S性能优良.The redistribution of phosphorus in TiSi_2/n^+ poly-Si polycide structure during heat trea-ment and the reason of its occurrence,as well as its effect on RIE etching process have beenstudied systematically.A way to suppress the out diffusion of phosphorus from high doping po-lysilicon and a suggestion that the patterning of a microstructure should be finished before an-nealing are proposed.The characteristics of the fabricated 0.6μm TiSi_2 polycide gate LDDMOSFET's are fine.

关 键 词：TiSi Polycide 复合结构 热处理 

分 类 号：TN305.3[电子电信—物理电子学]