IGBT温度特性及其等效电路模拟(英)  

IGBT's Temperature Behaviour and Simulated withMicro_Circuit Model

作　　者：袁寿财[1] 朱长纯[1] 

机构地区：[1]西安交通大学,西安710049

出　　处：《微电子学与计算机》2002年第10期26-31,共6页Microelectronics & Computer

基　　金：the National Science Foundation(No.60036016;50077016);partially suported by the Doctoral Foundation of Education Committee of P.R.China(No.CETD00-10).

摘　　要：文章提出了一种基于子电路的IGBT模型,并对IGBT的温度特性进行模拟。用电压控制的可变电阻等效IGBT的宽基区调制电阻取得了很好的效果。用SPICE的LEVEL_8模型,确保模拟的精确性和收敛性。模拟结果表明,无论PT型还是NPT型IGBT,其温度系数均可正可负,纠正了一种普遍的观点称为PT型IGBT,其温度系数可正可负而NPT型IGBT,其温度系数只为正。模拟结果与实验对比符合较好。In this paper the IGBT temperature behaviour is simulated with the proposed unique micro_circuit model,and its wide base conductivity modulated resistor is effectively equivalent by a Voltage Controlled Resistor(VCR). Employing the MOS_level_8 spice model,the proposed IGBT micro_circuit model gives more simulation accuracy and easy convergence. The simulation results shown that the temperature coefficient of the output current will be positive or negative for both the punch through (PT) and the non_punch through (NPT) IGBT and not the other works indicated that PT IGBT with positive or negative but the NPT IGBT only with positive temperature coefficient. The simulation results aren verified by comparison with measurement results and with best fits of them.

关 键 词：IGBT 等效电路模拟 绝缘栅双极晶体管 温度系数 子电路模型 SPICE 

分 类 号：TN322.8[电子电信—物理电子学]