AFM Studies of Platinum Silicide Thin Films on Silicon Grown by Pulsed Laser Deposition  

作　　者：MeichengLI DageLIU 等 

机构地区：[1]SchoolofMaterialsScienceandEngineering,HarbinInstituteofTechnology,Harbin150001,China [2]STMLab,InstituteofChemistry,ChineseAcadcmyofSciences,Beijing100080,China

出　　处：《Journal of Materials Science & Technology》2002年第1期24-26,共3页材料科学技术（英文版）

摘　　要：PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). The surface structure of these films was studied by atomic force microscopy (AFM). In addition, the compositional structure of the PtSi as determined from X-ray photoelectron spectroscopy (XPS) is discussed. First report of a possible growth mechanism is presented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealing temperatures and the film thicknesses.

关 键 词：PTSI Thin films PLD AFM 

分 类 号：TN304.055[电子电信—物理电子学]