Nonlinear Electrical Properties of SnO_2-Li_2O-Nb_2O_5 Varistor System  

作　　者：Changpeng LI, Jinfeng WANG, Wenbin SU, Hongcun CHEN and Wenxin WANGDepartment of Physics, Shandong University, Jinan 250100, China[ Manuscript received September 11, 2001, in revised form October 20, 2001] 

出　　处：《Journal of Materials Science & Technology》2002年第3期283-285,共3页材料科学技术（英文版）

摘　　要：The electrical properties of (Nb, Li)-doped SnO2 ceramics as a new varistor material were investigated. The sample 97.95%SnO2·0.50%Li2O·0.05%Nb2O5 (mol fraction) sintered at 1450= possess the highest density (ρ=6.77 g/cm3) and nonlinear electrical coefficient (α=11.6). The substitution of Sn4+ with Li+ increases the concentration of oxygen vacancies, together with the formation of solid solution, which will increase the sintering rate greatly and decrease the optimized sintering temperature. The substitution of Sn4+ with Li+ and the variation of temperature play very important effects on the densities, dielectric constant, nonlinear electrical properties and other characteristics of the samples. The properties of the grain boundary barrier and the microstructural characteristics were investigated to ensure the effect of the dopants and the temperature. A grain boundary defect barrier model was used to illustrate the grain boundary barriers formation in SnO2-Li2O-Nb2O5 varistors.The electrical properties of (Nb, Li)-doped SnO2 ceramics as a new varistor material were investigated. The sample 97.95%SnO2·0.50%Li2O·0.05%Nb2O5 (mol fraction) sintered at 1450= possess the highest density (ρ=6.77 g/cm3) and nonlinear electrical coefficient (α=11.6). The substitution of Sn4+ with Li+ increases the concentration of oxygen vacancies, together with the formation of solid solution, which will increase the sintering rate greatly and decrease the optimized sintering temperature. The substitution of Sn4+ with Li+ and the variation of temperature play very important effects on the densities, dielectric constant, nonlinear electrical properties and other characteristics of the samples. The properties of the grain boundary barrier and the microstructural characteristics were investigated to ensure the effect of the dopants and the temperature. A grain boundary defect barrier model was used to illustrate the grain boundary barriers formation in SnO2-Li2O-Nb2O5 varistors.

关 键 词：VARISTORS Tin oxide Lithium oxide Electrical properties 

分 类 号：TM281[一般工业技术—材料科学与工程]