用于薄膜沉积的XeCl激基激光器研制  

DESIGN OF A NEW XeCl EXCIMER LASER PUMPED BY PULSE DISCHARGE FOR DEPOSITING FILM

作　　者：任韧[1] 陈长乐[1] 金克新[1] 王跃龙[1] 汪世林[1] 王永仓[1] 宋宙模[1] 袁孝[1] 

机构地区：[1]西北工业大学应用物理系,西安710072

出　　处：《光子学报》2002年第9期1097-1100,共4页Acta Photonica Sinica

基　　金：陕西省自然基金 (2 0 0 1C2 1 )资助项目

摘　　要：以镀制半导体薄膜、巨磁薄膜、金刚石及其它薄膜 ,外延生长及后续的光刻 ,激光与物质的相互作用、等离子体研究为目的 ,设计、研制了脉冲放电激励的XeCl激基激光器 试验结果表明 :激光脉宽 1 8ns,单脉冲能量 1 5 0mJ ,矩形光斑大小 2cm× 1cm ,束散角 3mrad ,最高重复频率 5HZ 与同类激光器相比 ,具有结构简单、造价低廉。A new XeCl excimer laser is designed for depositing film in order to apply in the interaction between laser and material, material plasma study, and to prepare semiconductor film, CMR film, quartz film and other kinds of film .The parameters of the excimer laser are also measured and analyzed. The wavelength is 308nm,The pulse duration time is 18ns, the pulse energy is 150mJ, the beam divergence angle is 3mrad, and maximal repetition fequency is 5Hz. In the paper, not only the characters of Excimer Laser and design of Excimer Laser are discussed,but also electrode calculation, reducing circuit inductance,study of spark gap,ns discharge,UV preionization,and glow discharge are finished. A new Excimer Laser are got, which has high energy,simple structure, high pump intensity, and large activate volume.

关 键 词：薄膜沉积 XeCl激基激光器 研制 XECL准分子 预电离 辉光放电 纳秒放电 激光参量 氯化氙 

分 类 号：TN248.2[电子电信—物理电子学]