一种新型石墨烯/多孔氮化硅复合材料的制备及性能研究  

Fabrication and properties of a novel graphene/porous silicon nitride composite material

作　　者：钱栋梁[1] 葛道晗[1] 程广贵[1] 张立强[1] QIAN Dongliang;GE Daohan;CHENG Guanggui;ZHANG Liqiang(Micro Nano Science and Technology Research Center, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu Province, China)

机构地区：[1]江苏大学机械工程学院微纳米科学技术研究中心,江苏镇江212013

出　　处：《电子元件与材料》2017年第1期33-37,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.11404146);江苏省自然基金青年基金资助(No.BK20140556);江苏大学高级人才启动基金(No.13JDG020;No.13JDG021);江苏省博士后基金(No.1301047C)

摘　　要：基于等离子体增强化学气相沉积法、干法刻蚀技术、化学气相沉积法及腐蚀基底法,制备了一种新型石墨烯与多孔氮化硅复合材料;该结构的氮化硅衬底具有不同的形貌结构(孔阵列及沟道阵列)。利用扫描电子显微镜、原子力显微镜、拉曼光谱仪对石墨烯/多孔氮化硅复合材料进行表征和表面应力特性研究。结果表明:不同形貌结构的氮化硅与石墨烯复合后的表面应力不同。表面粗糙度、表面形貌及表面面积是影响复合材料表面应力的主要因素。其中,氮化硅多孔形貌结构(应变0.1%~0.12%)与氮化硅沟道形貌结构(应变0.16%~0.27%)相比,更有利于缓解石墨烯/多孔氮化硅复合材料的表面应力集中问题。By plasma enhanced chemical vapor deposition method, dry etching (IBM), chemical vapor phase deposition and substrate corrosion method, a novel graphene and porous silicon nitride composite material was prepared.The new silicon nitride substrate of the structures has different morphologies (hole array and channel array). The characterization and surface stress of graphene/porous silicon nitride composites were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. The results show that the surface stress of graphene on the silicon nitride with different morphologies and structures is different. Surface roughness, surface morphology and surface area are the main factors which can affect the surface stress of composite structures. Compared to the silicon nitride channel morphology (strain in the range of 0.16%-0.27%), the silicon nitride porous morphology (strain in the range of 0.1%-0.12%) is more conducive to ease the graphene/porous silicon nitride composite surface stress concentration problem.

关 键 词：石墨烯 多孔氮化硅 表面应力 微结构 性能调控 微纳器件 

分 类 号：TB332[一般工业技术—材料科学与工程]