基于EBSD技术的单晶硅纳米切削研究  

Nanometric Cutting of Monocrystalline Silicon Based on EBSD Technique

作　　者：徐宗伟[1] 赵兵[1] 刘红光[2] 刘冰[3] 国晨 Xu Zongwei;Zhao Bing;Liu Hongguang;Liu Bing;Guo Chen(State Key Laboratory of Precision Measuring Technology & Instruments,Tianjin University,Tianjin 300072,China;Tianjin Institute of Metrological Supervision Testing,Tianjin 300192,China;Department of Mechanical Engineering,Tianjin University of Commerce,Tianjin 300134,China)

机构地区：[1]天津大学精密测试技术与仪器国家重点实验室,天津300072 [2]天津市计量监督检测科学研究院,天津300192 [3]天津商业大学机械工程学院,天津300134

出　　处：《天津大学学报（自然科学与工程技术版）》2017年第1期99-104,共6页Journal of Tianjin University：Science and Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CB706700);国家自然科学基金资助项目(51275559;51575389)~~

摘　　要：切削加工产生的表面和亚表面损伤会影响零件的物理力学性能和使用寿命.对目前存在的主要的表面/亚表面损伤检测技术进行了阐述,指出了目前检测方法的优缺点,提出了一种基于电子背散射衍射技术(EBSD)检测方法,作为现有检测技术的补充.基于课题组自行搭建的集成于扫描电子显微镜高真空条件下的纳米切削实验装置,用金刚石刀具在单晶硅(001)晶面上沿<110>晶向进行切削,然后利用EBSD进行表征.结果表明:利用EBSD检测技术可以对单晶硅不同切削厚度的应力应变进行分析,通过使用不同的电子束能量可以对距离表面不同深度的亚表面损伤进行研究.此外,利用其高分辨率,可以对硅片加工过程中出现的相变进行定点分析.Surface and subsurface damages caused by cutting will have a great impact on the mechanical and physical properties and service life of machined workpieces.In this study,the main existing surface/subsurface damage detection technologies were expounded,and the advantages and disadvantages of the current detection methods were pointed out.A new method of detection was put forward based on the electron back scattering diffraction technique(EBSD)as a supplement of the present detection technology.Based on the nanometric cutting device under high vacuum condition based on SEM, which was designed and established before,a diamond tool was used to cut on(001)plane in<110>direction of monocrystalline silicon and the machined surfaces were detected by EBSD.The results show that EBSD can help to analyze the stress and strain of different cutting thicknesses,and subsurface damages at different depthes can be studied by using various electron beam energy.In addition,with the high resolution of EBSD,phase transformation can be investigated in the process of silicon wafer processing.

关 键 词：电子背散射衍射 亚表面损伤 应力应变 相变 

分 类 号：TH161.1[机械工程—机械制造及自动化]