抗辐射加固CMOS基准设计  

Design of a total-dose radiation hardened CMOS reference

作　　者：刘智[1] 杨力宏[1] 姚和平[1] 梁希[1] LIU Zhi;YANG Lihong;YAO Heping;LIANG Xi(Xi’an Institute of Microelectronics Technology, Xi’an Shaanxi 710065,China)

机构地区：[1]西安微电子技术研究所,陕西西安710065

出　　处：《太赫兹科学与电子信息学报》2017年第1期125-128,133,共5页Journal of Terahertz Science and Electronic Information Technology

基　　金：装备预先研究基金资助项目(51311050206)

摘　　要：研究了基于0.5μm互补金属氧化物半导体(CMOS)工艺的动态阈值MOS(DTMOS)晶体管的电流-电压特性曲线。与常规CMOS工艺PNP晶体管特性对比,得到了带隙电压基准电路设计准则;采用DTMOS和抗辐射设计加固技术,完成了抗辐射加固CMOS基准设计。辐照试验结果表明,设计的抗辐射加固CMOS基准的抗总剂量能力达到了300 krad(Si)。The I -U characteristic curves of Dynamic Threshold MOS(DTMOS) transistor are obtained based on 0.5 μm Complementary Metal Oxide Semiconductor(CMOS) process. Compared with the PNP transistor of conventional CMOS technology, the design criteria are given, which are used to design the radiation-hardened CMOS reference. The radiation-hardened CMOS reference is completed by using DTMOS diodes as radiation tolerance diodes and combining the Radiation Hardening By Design(RHBD) technology. The experimental results show that the ability of anti-γ ionizing radiation total dose reaches up to 300 krad(Si) for the radiation-hardened CMOS reference.

关 键 词：辐射加固 设计加固 带隙基准 动态阈值MOS管 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN386