3-2 A Study on Nano-indentation of 4H-SiC Irradiated by He and Si Ions  

作　　者：Han Yi Li Bingsheng Wang Zhiguang Peng Jinxin 

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2015年第1期91-92,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

摘　　要：Part of single crystal 4H-SiC wafers were implanted with 230 keV He+ ion at room temperature (RT) with fluences in the range 1.0  1015 2.0  1016 (0.040.8 dpa). The last single crystal 4H-SiC were implanted with 230 keV Si5+ ion at RT with fluences in the range 1.0  1015 1.0  1017 (0.044.0 dpa). Hardness versus maximum penetration depth curves for unimplanted 4H-SiC, and He/Si ion implanted 4H-SiC at different fluences. Nanoindentation was performed to investigate the hardening behavior of single crystals 4H-SiC under irradiation.

关 键 词：HE SI IONS 

分 类 号：O4[理学—物理]