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作 者:郑汉生[1,2] 杨涛[1] 韩建伟[1,2] 张振龙[1,2] 刘继奎[3] ZHENG Hansheng;YANG Tao;HAN Jianwei;ZHANG Zhenlong;LIU Jikui(National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China;Beijing Institute of Control Engineering, Beijing 100190, China)
机构地区:[1]中国科学院国家空间科学中心,北京100190 [2]中国科学院大学,北京100049 [3]北京控制工程研究所,北京100190
出 处:《航天器环境工程》2017年第2期183-189,共7页Spacecraft Environment Engineering
基 金:国防基础科研计划项目(编号:B1320133032)
摘 要:为研究影响介质-导体相间结构深层充电特性的内在因素,设计了不同构型的试验样品,利用90Sr放射源模拟空间高能电子环境对样品进行深层充电辐照试验,测量了充电电位的差异。并借助深层充电三维仿真软件计算介质-导体相间结构在不同几何构型情况下的深层充电电位、电场分布。试验和仿真结果表明,介质最高表面电位以及介质内部最大电场均与介质宽度和高度呈正相关。其他条件不变时,介质越宽,或越高于导体表面,发生放电的风险就越高。在介质与导体侧面存在微小缝隙情况下,介质内最大电场显著增强,易发生内部击穿。而在介质与导体之间的真空间隙内,电场很容易超过击穿阈值,放电风险很大。航天工程应用中为降低此种结构深层充放电的风险,在满足绝缘性能及其他要求的前提下应尽量减小介质的宽度,降低介质与导体间的高度差,并确保介质与导体侧面接触良好。To investigate the charging characteristics of the dielectric-conductor alternately layered structure,various samples are designed and irradiated by the90Srβsource to simulate the energetic-electron environment inspace and the sample charging potentials are measured during the experiment.By using the3-D simulation tool ofdeep dielectric charging,various structures are modeled and the charging potential and the electric field arecalculated numerically.Experimental and simulation results show that the maximum dielectric surface potential andthe built-in electric field of the structure are positively correlated with the width and the height(over the conductorsurface)of the dielectric.The wider or higher the dielectric is,the greater the discharging risk will be.Especiallywhen there is a narrow gap between the dielectric and the conductor,the electric field inside the dielectric will beenhanced dramatically and may result in an internal break-down.The electric field in the gap region might easilyexceed the vacuum break-down threshold value.To mitigate the internal charging hazards of such structures inspace engineering applications,the width and the height of the dielectric should be minimized as far as possible andthe gap between the dielectric and the conductor must be avoided.
分 类 号:V520.6[航空宇航科学与技术—人机与环境工程]
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